ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,366, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Crossbar circuits including RRAM devices with minimized write di... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,367, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Voltage replica circuits for RRAM-based crossbar circuits" was i... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,368, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Reconfigurable in-memory physic... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,369, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Select gate transistor with segmented channel fin" was inve... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,370, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory pillar selection transistor evaluation" was invented... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,371, issued on Oct. 27, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Fast, area efficient wordline decoding scheme" was invented by... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,372, issued on Oct. 27, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Row decoder circuit and corresponding method of... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,373, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program time in memory devices" was ... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,374, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Selection of an optimal single level cell programming schem... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,375, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and operating method thereof, a... Read More